APM/永源微 AP30N15D TO-252 150V/30A 52mΩ N沟道增强型MOSFET

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永源微电子，专业场效应管、功率器件设计研发制造商
●AP30N15D采用先进的沟槽技术，可提供出色的R-D（ON）、低栅极电荷和低至4.5V的栅极电压。该装置适用于电池保护或其他开关应用。
■一般特征
●V-DS=150V，I-D=30A
●V-GS=10V时，R-DS（开启）<52mΩ
■应用领域：电池保护 / 负载开关 / 不间断电源



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