AP30N15D TO-252 150V 30A 52mΩ 先进沟槽MOS 永源微

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■描述
●AP30N15D采用先进的沟槽技术，可提供出色的R-D（ON）、低栅极电荷和低至4.5V的栅极电压。该装置适用于电池保护或其他开关应用。

■一般特征
●V-DS=150V，I-D=30A
●V-GS=10V时，R-DS（开启）<52mΩ

■应用领域：电池保护 / 负载开关 / 不间断电源

永源微电子原厂授权代理芯美力科技，全系列MOS, 供应及技术支持
杨生 13250262776【微信同号】、QQ 3400632246

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