W956D6KBK

The is a 64M bit CellularRAM™ compliant products, organized as 4M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.

产品特点

Supports asynchronous and burst operations 

VCC, VCCQ Voltages:1.7V–1.95V VCC, 1.7V–1.95V VCCQ 

Random access time: 70ns 

Burst mode READ and WRITE access: 4, 8, 16, or 32 words, or continuous burst 

Burst wrap or sequential 

Max clock rate: 133 MHz (tCLK = 7.5ns) 

tACLK: 5.5ns at 133 MHz, 7ns at 104 MHz 

Low-power features: TCR, PAR, DPD

Package 49WFBGA (size: 4mm x 4mm)

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