碳化硅MOS电压2000V内阻98mΩ/ASC30N2000MT4PB
发布时间:2024-11-23 10:30
发布者:Eways-SiC
ASC30N2000MT4PB碳化硅MOS,电压2000V内阻98mΩ、Drain Current(continuous)at Tc=25℃ 30 A(DataSheet:
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ASC30N2000MT4PB碳化硅MOS,电压2000V内阻98mΩ、Drain Current(continuous)at Tc=25℃ 30 A(DataSheet:
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