总结
对硅片的光刻实验已经成功验证了可分离式模型在不同扫描型光刻机-光刻胶工艺类型中的应用。计算光刻的可分离式模型能够大幅度地加快产品投入生产的速度。如果现有的光刻胶工艺能够用于新型的扫描式光刻成像条件,这一可靠的模型(适用于任何扫描式光刻设备配置)只需要几分钟,而不是以往需要几周的时间就能执行。在曝光设备安装之前,该模型就能使用在设备厂测量的精确设备参数,愈早能建立精确的模型,就能够同时、平行地来确定设计规则、RET策略、OPC开发等。你还可以发现有更多的选件以及能获得最佳化的解决方案。
参考文献
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