U-boot-2009.08移植TE2440II开发板--支持Norflash
发布时间：2011-3-23 13:42
发布者：techshare
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TE2440II开发板使用的Norflash是INTEL的JS28F320J3D75，4M，32个block,每个128KB。本文添加对Norflash的支持，使Uboot可以烧录到Norflash，从Norflash启动，并执行Norflash下的命令。 这样需要注释掉 /include/configs/TE2440II.h中的 #define CONFIG_SKIP_LOWLEVEL_INIT 1 //#define CONFIG_SKIP_RELOCATE_UBOOT 1 把include/configs/TE2440II.h的Physical Memory Map和FLASH and environment organization修改为，这里添加了/board/cmi/flash.c中部份变量的宏定义。FLASH and environment organization这里的sector指的是手册中的bank，所以大小是128KB，为32块。#define CONFIG_ENV_ADDR (CONFIG_SYS_FLASH_BASE + 0x40000)，这个偏移是自己定的，是放环境变量的，只要不在uboot的代码区就可以。 CONFIG_SYS_FLASH_ERASE_TOUT和CONFIG_SYS_FLASH_WRITE_TOUT是超时的时间，如果小了，自己改大些。cpu/arm920t/s3c24x0/timer.c中讲述了怎么获得时间的。 /*----------------------------------------------------------------------- * Physical Memory Map */ #define CONFIG_NR_DRAM_BANKS 1 /* we have 1 bank of DRAM */ #define PHYS_SDRAM_1 0x30000000 /* SDRAM Bank #1 */ #define PHYS_SDRAM_1_SIZE 0x04000000 /* 64 MB */ #define PHYS_FLASH_1 0x00000000 /* Flash Bank #1 */ #define CONFIG_SYS_FLASH_BASE PHYS_FLASH_1 #define FLASH_BASE0_PRELIM PHYS_FLASH_1 #define CONFIG_SYS_MONITOR_BASE TEXT_BASE /*----------------------------------------------------------------------- * FLASH and environment organization */ #define CONFIG_SYS_MAX_FLASH_BANKS 1 /* max number of memory banks */ #define CONFIG_INTEL_JS28F320 1 #define PHYS_FLASH_SIZE 0x400000 /* 4M */ #define CONFIG_SYS_MAX_FLASH_SECT 32 #define CONFIG_ENV_ADDR (CONFIG_SYS_FLASH_BASE + 0x40000) /* timeout values are in ticks */ #define CONFIG_SYS_FLASH_ERASE_TOUT (2*CONFIG_SYS_HZ) /* Timeout for Flash Erase */ #define CONFIG_SYS_FLASH_WRITE_TOUT (2*CONFIG_SYS_HZ) /* Timeout for Flash Write */ #define CONFIG_ENV_IS_IN_FLASH 1 #define CONFIG_ENV_SIZE 0x20000 /* Total Size of Environment Sector */ #endif /* __CONFIG_H */ 用board/cmi/下的flash.c文件替换board/samsung/TE2440II/下的flash.c，因为cmi目录下的正好是JS28F320J3D75的驱动文件。删除这个write_short函数的申明和定 义、删除write_buff函数。替换成下面的两个函数： /****************************************************************************************************** * Copy memory to flash. */ int write_buff (flash_info_t *info, uchar *src, ulong addr, ulong cnt) { ulong cp, wp; ushort data; int l; int i, rc; wp = (addr & "1); /* get lower word aligned address */ /* * handle unaligned start bytes */ if ((l = addr - wp) != 0) { data = 0; for (i=0, cp=wp; i＜l; ++i, ++cp) { data = (data ＞＞ 8) | (*(uchar *)cp ＜＜ 8); } for (; i＜2 && cnt＞0; ++i) { data = (data ＞＞ 8) | (*src++ ＜＜ 8); --cnt; ++cp; } for (; cnt==0 && i＜2; ++i, ++cp) { data = (data ＞＞ 8) | (*(uchar *)cp ＜＜ 8); } if ((rc = write_word(info, wp, data)) != 0) { return (rc); } wp += 2; } /* * handle word aligned part */ while (cnt ＞= 2) { data = *((vu_short*)src); if ((rc = write_word(info, wp, data)) != 0) { return (rc); } src += 2; wp += 2; cnt -= 2; } if (cnt == 0) { return ERR_OK; } /* * handle unaligned tail bytes */ data = 0; for (i=0, cp=wp; i＜2 && cnt＞0; ++i, ++cp) { data = (data ＞＞ 8) | (*src++ ＜＜ 8); --cnt; } for (; i＜2; ++i, ++cp) { data = (data ＞＞ 8) | (*(uchar *)cp ＜＜ 8); } return write_word(info, wp, data); } /****************************************************************************************************** * Copy memory to flash. */ static int write_word (flash_info_t *info, ulong dest, ushort data) { vu_short *addr = (vu_short *)dest, val; int rc = ERR_OK; int flag; /* Check if Flash is (sufficiently) erased , fix by kavin*/ if ((*addr & data) != data) return ERR_NOT_ERASED; /* * Disable interrupts which might cause a timeout * here. Remember that our exception vectors are * at address 0 in the flash, and we don't want a * (ticker) exception to happen while the flash * chip is in programming mode. */ flag = disable_interrupts(); /* clear status register command */ *addr = 0x50; /* program set-up command */ *addr = 0x40; /* latch address/data */ *addr = data; /* arm simple, non interrupt dependent timer */ reset_timer_masked(); /* wait while polling the status register */ while(((val = *addr) & 0x80) != 0x80) { if (get_timer_masked() ＞ CONFIG_SYS_FLASH_WRITE_TOUT) { rc = ERR_TIMOUT; /* suspend program command */ *addr = 0xB0; goto outahere; } } if(val & 0x1A) { /* check for error */ printf("\nFlash write error %02x at address %08lx\n", (int)val, (unsigned long)dest); if(val & (1＜＜3)) { printf("Voltage range error.\n"); rc = ERR_PROG_ERROR; goto outahere; } if(val & (1＜＜1)) { printf("Device protect error.\n"); rc = ERR_PROTECTED; goto outahere; } if(val & (1＜＜4)) { printf("Programming error.\n"); rc = ERR_PROG_ERROR; goto outahere; } rc = ERR_PROG_ERROR; goto outahere; } outahere: /* read array command */ *addr = 0xFF; if (flag) enable_interrupts(); return rc; } 修改flash.c文件中的一个宏定义： 把： #define FLASH_BLOCK_SIZE 0x00010000 改为： #define FLASH_BLOCK_SIZE 0x00020000 修改开发板目录下的lowlevel_init.S文件中SDARM刷新参数为： #define REFCNT 1258 /* period=7.8125us, HCLK=405/4 Mhz, (2048+1-7.8125*405/4) */ Lowlevel_init.S中对SDRAM进行了初始化，因为我们要把第二阶段的代码搬运到SDRAM中，REFCNT是刷新计数器，这个在移植的时候是一定要修改的。手册上有公式：Refresh period = (2^11-refresh_count+1)/HCLK，我使用的这款芯片在datasheet写着8192Refresh cycle/64ms，所以一个刷新周期为64ms/8192=7.8125us。目前公认的标准是，存储体中电容中数据有效保存期上限是64ms,也就是说每一行刷新的循环周期是64ms，这样刷新的速度就是：行数量/64ms。我的理解是CPU并不知道你用的SDRAM的刷新速度是多少，特殊功能寄存器也没有直接传递刷新速度的位，但是有一个刷新计数器，可以通过刷新计数器间接获得刷新速度，所以要设定刷新计数器。 然后就可以烧录Norflash了。  李万鹏 |
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