上海需要一位“power discrete sr designer”

发布时间:2013-9-4 14:47    发布者:KT咨询
关键词: GBT , power mos , Device , simulation
【猎头职位:上海需要一位“power discrete sr designer”】职位关键词:IGBT,power mos,Device,simulation 联系人:Raymond Chen,MSN:utopia.chen@hotmail.com, Skype:shmily831126, Email: raymond-chen@kthr.com。微信也可查询职位啦!打开手机微信,搜号码“KTHR_COM”或查找微信公众帐号“KT人才”或扫描以上二维码即可添加,欢迎大家关注!

Job Description
1. To develop and optimize device architectures of state of the art power semiconductors;
2. Optimize static and dynamic device performance;
3. Co-work with FAB process experts to create prototypes;

Job Requirement
1. Master or PhD degree in Electrical engineering, Semiconductor Physics Microelectronics;
2. Or similar with at least 4 years experience in discrete power semiconductor device development;
3. Using state of the art simulation software, preferably Synopsis TCAD (Sentaurus) process and device simulators;
4. Solid knowledge of state-of-the art IGBT and Superjunction devices architecture is required;
5. Experienced in device layouting (Cadence);
6. 3D simulation and packaging know-how is of advantage but not mandatory;
7. Mandarin and good command in English;
8. Highly innovative and self-motivated individuals;


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