C30950EH  硅雪崩光电二极管(SiAPD)放大器模块

The C30950EH is a Silicon Avalanche Photodiode with a hybrid 
preamplifier supplied in a single modified 12-lead TO-8 
package. 
The C30817EH avalanche photodiode used in this device is 
made using a “reach-through” structure which provides very 
good response between 400 and 1100nm and very fast rise 
and fall times at all wavelengths. The preamplifier section is 
designed to neutralize the input capacitance of a unity voltage 
gain amplifier. An emitter follower is used as an output buffer 
stage. To obtain the wideband characteristics, the output of 
this device should be AC (capacitively) coupled to a 50Ω 
termination.
KKey Features 
· System Bandwidth (3 dB Point) : 
DC to 50 MHz, 100 MHz, 200 MHz
· Noise Equivalent Power (NEP) at TA= 25°C :
0.029 pW/√Hz at 900 nm (50 MHz)
0.057 pW/√Hz at 830 nm (100 MHz)
0.120 pW/√Hz at 830 nm (200 MHz)
· Spectral Response Range (10% Points): 
400 to 1000 nm
· Lower Power Consumption (60 mW typ.)
· Wide Range of Amplifier Operating 
Voltages
· 50Ω DC coupling capability
· Hermetically-Sealed Modified TO-8 
Packages
· High Reliability
· Custom bandwidth and detector available 
on request
Applications
· Range Finding
· Confocal Microscope
· LIDAR
· Laser designation
· Scanning laser ophthalmoscope